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| K3662 Description |
| N-Channel MOSFET, 2SK3662
2SK3662
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSII)
2SK3662
Switching Regulator, DC DC Converter, Motor Drive Applications
Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) High forward transfer admittance: |Yfs| = 55 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Enhancement mode : Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20
Toshiba Semiconductor |
| Related Part Number |
K3601GL | K3670 K3618 | K3621 K3641 | K3669 |
| DataSheet.es | 2020 | Contacto |