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| K3520PQ-XH Description |
| Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
SEMICONDUCTOR
TECHNICAL DATA
General Description
The K3520PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.
K3520PQ-XH
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
2000
S2
FEATURES ยก Low on-state resistance RDS(ON)1 = 16m MAX (VGS=4.5V, IS=1.0A) RDS(ON)2 = 17m MAX (VGS=3.9V, IS=1.0A) RDS(ON)3 = 20m MAX (VGS=3.5V, IS=1.0A)
G2 1080
S1 G1
BOTTOM : COMMON DRAIN
_10 m 180 +
MAXIMUM RAT
KEC |
| Related Part Number |
K3503FC500 | K3503FT480 K3503FC520 | K3543 K3503FC450 | K3503FT500 |
| DataSheet.es | 2020 | Contacto |