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K3520PQ-XH PDF File ( Datasheet )




 



K3520PQ-XH Description
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

SEMICONDUCTOR TECHNICAL DATA General Description The K3520PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration. K3520PQ-XH Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor 2000 S2 FEATURES ยก Low on-state resistance RDS(ON)1 = 16m MAX (VGS=4.5V, IS=1.0A) RDS(ON)2 = 17m MAX (VGS=3.9V, IS=1.0A) RDS(ON)3 = 20m MAX (VGS=3.5V, IS=1.0A) G2 1080 S1 G1 BOTTOM : COMMON DRAIN _10 m 180 + MAXIMUM RAT

KEC
KEC




Related Part Number

K3503FC500  |  K3503FT480  

K3503FC520  |  K3543  

K3503FC450  |  K3503FT500  



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