K3418 PDF File ( Datasheet )

2SK3418 Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 4.3 mΩ typ. Capable of 4 V gate drive High speed switching Outline TO-220AB D G S1 2 3 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 s, duty cycle ≤ 1% 2. Value at Tc = 25�