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Download K3152.PDF
| K3152 Description |
| N-Channel MOSFET, 2SK3152
2SK3152
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-732 (Z) 1st. Edition February 1999 Features
Low on-resistance R DS = 100 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source
Outline
TO 220FM
D
G
1 2 S
1. Gate 2. Drain 3. Source
3
2SK3152
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Chan
Hitachi Semiconductor |
| Related Part Number |
K319 | K3157 K3158 | K318 K3100G | K3128 |
| DataSheet.es | 2020 | Contacto |