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K18A50D PDF File ( Datasheet )
Toshiba
TK18A50D(STA4,Q,M)
MOSFET N-CH 500V 18A TO220SIS / N-Channel 500 V 18A (Ta) 50W (Tc) Through Hole TO-220SIS
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| Verical | 32 | Visit Site | |||
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| Mouser | 94 | 4.8 | Visit Site | ||
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| Worldway Electronics | 22,731 | Visit Site | |||
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| K18A50D Description |
| Field Effect Transistor
TK18A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK18A50D
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.22 Ω (typ.) High forward transfer admittance: Yfs = 8.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1
 Toshiba |
| Related Part Number |
K1850 | K18A60V K1889 | K1813 K1830 | K1846 |
| DataSheet.es | 2020 | Contacto |