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| K1829 Description |
| N-Channel MOSFET, 2SK1829
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1829
High Speed Switching Applications Analog Switch Applications
2.5 V gate drive Low threshold voltage: Vth = 0.5 to 1.5 V High speed Enhancement-mode Small package
Marking
Equivalent Circuit
2SK1829
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range
Symbol
VDS VGSS
ID PD Tch Tstg
R
Toshiba |
| Related Part Number |
K18A60V | K1850 K1827 | K1840 K1867 | K1891 |
| DataSheet.es | 2020 | Contacto |