K1611 PDF File ( Datasheet )

Power F-MOS FETs 2SK1611 Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-speed switching characteristic unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 s Applications 16.7±0.3 7.5±0.2 q High-speed switching (switching power supply, AC adaptor) q For high-frequency power amplification φ3.1±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltag