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| K1317 Description |
| N-Channel MOSFET, 2SK1317
2SK1317
Silicon N-Channel MOS FET
Application
High speed power switching
Features
High breakdown voltage V DSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver
Outline
TO-3P
D
G
1 2 3 1. Gate 2. Drain (Flange) 3. Source
S
2SK1317
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current
Hitachi Semiconductor |
| Related Part Number |
K1351VC600 | K1351VF600 K1351VC620 | K1305 K1351VF620 | K1351VC640 |
| DataSheet.es | 2020 | Contacto |