ISL9N327AD3ST PDF File ( Datasheet )

ISL9N327AD3ST February 2002 ISL9N327AD3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC, DC converters and allows operation to higher switching frequencies. Features Fast switching rDS(ON) = 0.023Ω (Typ), VGS = 10V rDS(ON) = 0.033Ω (T