DataSheet.es    

ISL9N322AP3 PDF File ( Datasheet )

onsemi
ISL9N322AP3
Power Field-Effect Transistor, 35A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...

PDF Datasheet
DistributorStock110100Link
Win Source12,800Visit Site
Worldway Electronics14,0900.2440.2394Visit Site
Bettlink33,0000.483610.358220.3115Visit Site
Anlinkda12,0060.1180.1060.097Visit Site
Powered by Octopart



 



ISL9N322AP3 Description
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

ISL9N322AP3, ISL9N322AS3ST January 2002 ISL9N322AP3, ISL9N322AS3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC, DC converters and allows operation to higher switching frequencies. Features Fast switching rDS(ON) = 0.018Ω (Typ), VGS = 1
Fairchild Semiconductor
Fairchild Semiconductor



Related Part Number

ISL3332  |  ISL29033  

ISL9110A  |  ISL6754  

ISL3232E  |  ISL6625A  



DataSheet.es    |   2020   |  Contacto