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| ISL9N322AD3ST Description |
| N-Channel Logic Level UltraFET Trench MOSFET 30V/ 20A/ 0.022
ISL9N322AD3ST
January 2002
PWM Optimized
ISL9N322AD3ST
N-Channel Logic Level UltraFET® Trench MOSFET 30V, 20A, 0.022Ω
General Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC, DC converters and allows operation to higher switching frequencies.
Features
Fast switching rDS(ON) = 0.018Ω (Typ), VGS = 10V rDS(ON) =
Fairchild Semiconductor |
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