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ISL9N312AD3ST PDF File ( Datasheet )

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ISL9N312AD3ST
MOSFET N-Ch LL UltraFET PWM Optimized

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ISL9N312AD3ST Description
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

ISL9N312AD3 , ISL9N312AD3ST June 2002 ISL9N312AD3 , ISL9N312AD3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC, DC converters and allows operation to higher switching frequencies. Features Fast switching rDS(ON) = 0.010Ω (Typ), VGS =

Fairchild Semiconductor
Fairchild Semiconductor



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