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IRLW640A PDF File ( Datasheet )

VBsemi
IRLW640A-VB
N¡ªchannel, 200V, 25A, Rds(on), 54M¦¸@10V, 112M¦¸@4.5V, 20VGS(¡ÀV), 3.2VTH(V) , TO252
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IRLW640A Description
Power MOSFET, Transistor

$GYDQFHG 3RZHU 026)(7 IRLW, I640A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 150°C Operating Temperature Lower Leakage Current: 10 A (Max.) @ VDS = 200V Lower RDS(ON): 0.145Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv, dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain

Fairchild Semiconductor
Fairchild Semiconductor




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