|
| IRLW640A Description |
| Power MOSFET, Transistor
$GYDQFHG 3RZHU 026)(7
IRLW, I640A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 150°C Operating Temperature Lower Leakage Current: 10 A (Max.) @ VDS = 200V Lower RDS(ON): 0.145Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv, dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain
Fairchild Semiconductor |
| Related Part Number |
IRL610S | IRL540 IRL640S | IRL60S216 IRL7472L1TRPbF | IRLI620A |
| DataSheet.es | 2020 | Contacto |