IRLS530A PDF File ( Datasheet )

Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 A (Max.) @ VDS = 100V n Lower RDS(ON) : 0.101Ω (Typ.) IRLS530A BVDSS = 100 V RDS(on) = 0.12Ω ID = 10.7 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv, dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Cur