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| IRLR230 Description |
| Power MOSFET, Transistor
$GYDQFHG 3RZHU 026)(7
IRLR230
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10 A (Max.) @ VDS = 200V Lower RDS(ON): 0.335Ω (Typ.)
BVDSS = 200 V RDS(on) = 0.4Ω ID = 7.5 A
D-PAK I-PAK
2
11
3
2 3
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv, dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continu
Fairchild Semiconductor |
| Advanced Power MOSFET
$GYDQFHG 3RZHU 026)(7
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10 A (Max.) @ VDS = 200V Lower RDS(ON): 0.335Ω (Typ.)
IRLR, U230A
BVDSS = 200 V RDS(on) = 0.4Ω ID = 7.5 A
D-PAK
2 1 3 1
I-PAK
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv, dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=2
Fairchild Semiconductor |
| Related Part Number |
IRL530 | IRL630 IRLW640A | IRL620S IRLW540A | IRL1104L |
| DataSheet.es | 2020 | Contacto |