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IRLR024ZPBF PDF File ( Datasheet )

Infineon
IRLR024ZPBF
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 46 Milliohms; ID 16A; D-Pak (TO-252AA); PD 35W
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IRLR024ZPBF Description
Power MOSFET, Transistor

Features n Logic Level n Advanced Process Technology n Ultra Low On-Resistance n 175°C Operating Temperature n Fast Switching n Repetitive Avalanche Allowed up to Tjmax n Lead-Free G Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make th

International Rectifier
International Rectifier




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