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| IRLR024ZPBF Description |
| Power MOSFET, Transistor
Features n Logic Level n Advanced Process Technology n Ultra Low On-Resistance n 175°C Operating Temperature n Fast Switching n Repetitive Avalanche Allowed up to Tjmax n Lead-Free
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Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make th
International Rectifier |
| Related Part Number |
IRLW640A | IRLR120N IRLR230 | IRLI620A IRLW540A | IRL1104L |
| DataSheet.es | 2020 | Contacto |