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IRLR024Z PDF File ( Datasheet )
Infineon
IRLR024ZPBF
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 46 Milliohms; ID 16A; D-Pak (TO-252AA); PD 35W
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Win Source | 20 | Visit Site | |||
| Worldway Electronics | 6,783 | Visit Site | |||
| Aztech | 11,502 | 0.97 | Visit Site | ||
| Anlinkda | 34,940 | 0.472 | Visit Site | ||
| RC Electronics | 31,385 | 0.34 | Visit Site | ||
| SHENGYU ELECTRONICS | 19,945 | 0.1531 | Visit Site | ||
| Chipsmall Limited | 4,800 | 1.05 | Visit Site | ||
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| IRLR024Z Description |
| (IRLU/R024Z) Power MOSFET
PD - 95825A
AUTOMOTIVE MOSFET
IRLR024Z IRLU024Z
HEXFET® Power MOSFET
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Features
n n n n n n
Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = 55V
G S
RDS(on) = 58mΩ ID = 16A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features
 International Rectifier |
| Power MOSFET, Transistor
Features n Logic Level n Advanced Process Technology n Ultra Low On-Resistance n 175°C Operating Temperature n Fast Switching n Repetitive Avalanche Allowed up to Tjmax n Lead-Free
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Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make th
International Rectifier |
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IRL610S | IRL540 IRL640S | IRL60S216 IRL7472L1TRPbF | IRLML5203GPbF |
| DataSheet.es | 2020 | Contacto |