IRLMS6802PBF PDF File ( Datasheet )

PD- 94897 IRLMS6802PbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free D D 1 6 A D VDSS = -20V RDS(on) = 0.050Ω 2 5 D G 3 4 S Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.