|
| IRLMS6802 Description |
| HEXFET Power MOSFET
PD- 91848E
IRLMS6802
HEXFET® Power MOSFET
l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel
D
1
6
A D
VDSS = -20V
D
2 5
D
G
3
4
S
RDS(on) = 0.050Ω
Top View
Description
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The
International Rectifier |
| HEXFET Power MOSFET
PD- 94897
IRLMS6802PbF
HEXFET® Power MOSFET
l l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free
D D
1
6
A D
VDSS = -20V RDS(on) = 0.050Ω
2
5
D
G
3
4
S
Description
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
International Rectifier |
| Related Part Number |
IRLR210A | IRLML2502PBF-1 IRLI640A | IRLU210A IRL520S | IRL640 |
| DataSheet.es | 2020 | Contacto |