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IRLIZ24G PDF File ( Datasheet )

VBsemi
IRLIZ24GPBF-VB
N, 60V, 45A, Rds(on), 27M¦¸@10V, 31M¦¸@4.5V, 20VGS(¡ÀV), 1~3VTH(V) , TO220F
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IRLIZ24G Description
HEXFET POWER MOSFET


International Rectifier
International Rectifier
Power MOSFET, Transistor

Power MOSFET IRLIZ24G, SiHLIZ24G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 5.0 V 18 4.5 12 Single 0.10 TO-220 FULLPAK D G GDS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free FEATURES Isolated Package High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Sink to Lead Creepage Distance = 4.8 mm Logic-Level Gate Drive RDS(on) Specified at VGS = 4 V and 5 V Fast Switching Ease of Paralleling Lea

Vishay
Vishay




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