|
| IRLIZ24G Description |
| HEXFET POWER MOSFET
International Rectifier |
| Power MOSFET, Transistor
Power MOSFET
IRLIZ24G, SiHLIZ24G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 5.0 V
18 4.5 12 Single
0.10
TO-220 FULLPAK
D
G
GDS
S N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
FEATURES Isolated Package High Voltage Isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz) Sink to Lead Creepage Distance = 4.8 mm Logic-Level Gate Drive RDS(on) Specified at VGS = 4 V and 5 V Fast Switching Ease of Paralleling Lea
Vishay |
| Related Part Number |
IRLI640A | IRLML5203GPbF IRLR210A | IRL7472L1TRPbF IRL610S | IRL540 |
| DataSheet.es | 2020 | Contacto |