IRLI520N PDF File ( Datasheet )

PD - 9.1496A PRELIMINARY Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l l IRLI520N HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.18Ω G ID =8.1A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and r

PD - 95049 IRLI520NPbF Lead-Free www.irf.com 1 2, 25, 04 IRLI520NPbF 2 www.irf.com IRLI520NPbF www.irf.com 3 IRLI520NPbF 4 www.irf.com IRLI520NPbF www.irf.com 5 IRLI520NPbF 6 www.irf.com IRLI520NPbF www.irf.com 7 IRLI520NPbF 8 www.irf.com IRLI520NPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information E X AM P L E : T H IS IS AN IR F I8 4 0 G W IT H AS S E M B L Y L O T CO D E 3 4 3 2 AS S E M B L E D O