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IRL610S PDF File ( Datasheet )




 



IRL610S Description
Power MOSFET, Transistor

$GYDQFHG 3RZHU 026)(7 IRL610S FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 150°C Operating Temperature Lower Leakage Current: 10 A (Max.) @ VDS = 200V Lower RDS(ON): 1.185Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv, dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Curr

Fairchild Semiconductor
Fairchild Semiconductor




Related Part Number

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