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IRL610A PDF File ( Datasheet )

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IRL610A
Tube Through Hole N-Channel Single Mosfet Transistor 3.3A Tc 3.3A 33W 6ns
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Rochester Electronics2230.2245Visit Site
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IRL610A Description
Advanced Power MOSFET

$GYDQFHG 3RZHU 026)(7 FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10 A (Max.) @ VDS = 200V Lower RDS(ON):1.185Ω (Typ.) 1 2 3 IRL610A BVDSS = 200 V RDS(on) = 0.046Ω ID = 3.3 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv, dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) C

Fairchild Semiconductor
Fairchild Semiconductor




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