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| IRL610A Description |
| Advanced Power MOSFET
$GYDQFHG 3RZHU 026)(7
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10 A (Max.) @ VDS = 200V Lower RDS(ON):1.185Ω (Typ.)
1 2 3
IRL610A
BVDSS = 200 V RDS(on) = 0.046Ω ID = 3.3 A
TO-220
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv, dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) C
Fairchild Semiconductor |
| Related Part Number |
IRLW640A | IRL640S IRLW540A | IRL7472L1TRPbF IRL1104L | IRL610S |
| DataSheet.es | 2020 | Contacto |