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IRL5602SPBF PDF File ( Datasheet )

Infineon
IRL5602SPBF
Mosfet, Power; P-ch; Vdss -20V; Rds(on) 0.042 Ohm; Id -24A; D2PAK; Pd 75W; Vgs +/-8V; -55

PDF Datasheet
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IRL5602SPBF Description
Power MOSFET, Transistor

PD- 95099 IRL5602SPbF HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv, dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated Lead-Free D VDSS = -20V RDS(on) = 0.042Ω G S ID = -24A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEX
International Rectifier
International Rectifier



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