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| IRL530 Description |
| Power MOSFET, Transistor
$GYDQFHG 3RZHU 026)(7
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10 A (Max.) @ VDS = 100V Lower RDS(ON): 0.101Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGS EAS IAR EAR dv, dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Fairchild Semiconductor |
| Power MOSFET, Transistor
International Rectifier |
| Related Part Number |
IRL540 | IRL640S IRLML2402GPBF | IRL60S216 IRLR220 | IRLML2803GPBF |
| DataSheet.es | 2020 | Contacto |