IRL3803VS PDF File ( Datasheet )

PD - 94735 HEXFET® Power MOSFET l l l l l l l IRL3803VS IRL3803VL VDSS = 30V Logic-Level Gate Drive Advanced Process Technology Surface Mount (IRL3803VS) Low-profile through-hole (IRL3803VL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 5.5mΩ G S ID = 140A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with th

l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) l 175°C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs a