IRL3102S PDF File ( Datasheet )

PD 9.1691A PRELIMINARY l l l l l IRL3102S HEXFET® Power MOSFET D Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching VDSS = 20V G S RDS(on) = 0.013W ID = 61A Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at

PD- 95589 IRL3102SPbF HEXFET® Power MOSFET D VDSS = 20V RDS(on) = 0.013Ω G Lead-Free S ID = 61A www.irf.com 1 07, 20, 04 IRL3102SPbF Ω 2 www.irf.com IRL3102SPbF www.irf.com 3 IRL3102SPbF 4 www.irf.com IRL3102SPbF www.irf.com 5 IRL3102SPbF 6 www.irf.com IRL3102SPbF Peak Diode Recovery dv, dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer + + - dv, dt controlled by RG ISD controlled