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| IRL1104S Description |
| Power MOSFET, Transistor
PRELIMINARY
l Logic-Level Gate Drive
l Advanced Process Technology l Surface Mount (IRL1104S) l Low-profile through-hole (IRL1104L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p
International Rectifier |
| HEXFET Power MOSFET
PD -95576
Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL1104S) l Low-profile through-hole (IRL1104L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l
IRL1104SPbF IRL1104LPbF
HEXFET® Power MOSFET
D
VDSS = 40V RDS(on) = 0.008Ω
G
ID = 104A
S
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined
International Rectifier |
| Related Part Number |
IRLI620A | IRL530 IRL630 | IRL620S IRLU210A | IRLR120N |
| DataSheet.es | 2020 | Contacto |