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IRL1104S PDF File ( Datasheet )

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IRL1104SPBF
Trans MOSFET N-CH 40V 104A 3-Pin (2+Tab) D2PAK
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IRL1104S Description
Power MOSFET, Transistor

PRELIMINARY l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL1104S) l Low-profile through-hole (IRL1104L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

International Rectifier
International Rectifier
HEXFET Power MOSFET

PD -95576 Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL1104S) l Low-profile through-hole (IRL1104L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l IRL1104SPbF IRL1104LPbF HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 0.008Ω G ID = 104A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined

International Rectifier
International Rectifier




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