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| IRFZ44ZSPBF Description |
| Power MOSFET, Transistor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to m
International Rectifier |
| Related Part Number |
IRFH7885PBF | IRF822FI IRFZ14 | IRFP240R IRF9310PBF-1 | IRFS7730PbF |
| DataSheet.es | 2020 | Contacto |