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| IRFY340 Description |
| N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
IRFY340
MECHANICAL DATA Dimensions in mm (inches)
4.70 5.00 0.70 0.90 3.56 Dia. 3.81 10.41 10.92
10.41 10.67
N CHANNEL POWER MOSFET FOR HI REL APPLICATIONS
VDSS ID(cont) RDS(on)
FEATURES
0.89 1.14
1 2 3
12.70 19.05
400V 6.9A 0.55Ω
16.38 16.89
13.39 13.64
HERMETICALLY SEALED TO 220 METAL PACKAGE SIMPLE DRIVE REQUIREMENTS LIGHTWEIGHT
2.54 BSC
2.65 2.75
TO 220M Metal Package
Pad 1 Gate Pad 2 Drain Pad 3 Source
SCREENING OPTIONS AVAILABLE ALL LEADS ISOLATED FROM CASE
ABSOLUTE
Seme LAB |
| POWER MOSFET N-CHANNEL
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Provisional Data Sheet No. PD 9.1290B
HEXFET® POWER MOSFET
IRFY340CM
N-CHANNEL
400 Volt, 0.55Ω HEXFET
HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of para
International Rectifier |
| Related Part Number |
IRF1407SPbF | IRF1404ZS IRF100S201 | IRF1405LPbF IRF256 | IRFH3707PBF-1 |
| DataSheet.es | 2020 | Contacto |