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IRFW720S PDF File ( Datasheet )




 



IRFW720S Description
Power MOSFET, Transistor

$GYDQFHG 3RZHU 026)(7 IRFW720S FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10 A (Max.) @ VDS = 400V Lower RDS(ON): 1.408Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv, dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Sour

Fairchild Semiconductor
Fairchild Semiconductor




Related Part Number

IRFS710A  |  IRF254  

IRFP352R  |  IRFH3707PBF-1  

IRFH7185PBF  |  IRFR3707ZPbF  



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