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| IRFU6215 Description |
| Power MOSFET, Transistor
PD - 91749
PRELIMINARY P-Channel l 175°C Operating Temperature l Surface Mount (IRFR6215) l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description
l
IRFR, U6215
HEXFET® Power MOSFET
D
VDSS = -150V RDS(on) = 0.295Ω
G
ID = -13A
S
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed
International Rectifier |
| Power MOSFET, Transistor
IRFR6215PbF IRFU6215PbF
P-Channel 175°C Operating Temperature Surface Mount (IRFR6215) Straight Lead (IRFU6215) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free
Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, pr
Infineon |
| Related Part Number |
IRF6217PBF-1 | IRFW614A IRF9530NPBF | IRF7404TRPBF-1 IRF613 | IRFP250A |
| DataSheet.es | 2020 | Contacto |