IRFU220A PDF File ( Datasheet )

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.626 Ω (Typ.) IRFR, U220A BVDSS = 200 V RDS(on) = 0.8 Ω ID = 4.6 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv, dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C