|
| IRFS720A Description |
| N-Channel MOSFET Transistor
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFS720A
FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
IDM Drain Curr
Inchange Semiconductor |
| Power MOSFET, Transistor
)($785(6
Q $YDODQFKH 5XJJHG 7HFKQRORJ\ Q 5XJJHG *DWH 2[LGH 7HFKQRORJ\ Q , RZHU ,QSXW &DSDFLWDQFH Q ,PSURYHG *DWH &KDUJH Q ([WHQGHG 6DIH 2SHUDWLQJ $UHD Q , RZHU , HDNDJH &XUUHQW P $ 0D[ # 9'6 9 Q , RZHU 5'6 21 : 7\S
$EVROXWH 0D[LPXP 5DWLQJV
6\PERO 9'66
,'
,'0 9*6 ($6 ,$5 ($5 GY GW
3'
7- 767*
7,
&KDUDFWHULVWLF 'UDLQðWRð6RXUFH 9ROWDJH
&RQWLQXRXV 'UDLQ &XUUHQW 7& 2 &RQWLQXRXV 'UDLQ &XUUHQW 7& 2
'UDLQ
Samsung |
| Related Part Number |
IRF641 | IRFR034A IRFP442R | IRF462 IRFU430A | IRFSZ24A |
| DataSheet.es | 2020 | Contacto |