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IRFS620B PDF File ( Datasheet )

VBsemi
IRFS620B-VB
N¡ªchannel, 200V, 10A, Rds(on), 283M¦¸@10V, 300M¦¸@4.5V, 20VGS(¡ÀV), 3.5VTH(V) , TO220F
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IRFS620B Description
200V N-Channel MOSFET

IRF620B, IRFS620B November 2001 IRF620B, IRFS620B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC, DC conver

Fairchild
Fairchild




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