IRFS38N20D PDF File ( Datasheet )

PD - 94358 SMPS MOSFET IRFB38N20D IRFS38N20D IRFSL38N20D HEXFET® Power MOSFET l Applications High frequency DC-DC converters VDSS 200V RDS(on) max 0.054Ω ID 44A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l TO-220AB IRFB38N20D D2Pak IRFS38N20D TO-262 IRFSL38N20D Absolute Maximum Ratings Parameter ID @ TC = 25°C

Applications High frequency DC-DC converters Plasma Display Panel Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Lead-Free IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET® Power MOSFET Key Parameters VDS 200 V VDS(Avalanche) min. RDS(on) max @ 10V TJ max 260 V 54 m 175 °C DD D GDS S G TO-220AB D2 Pak IRFB38N20D