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IRFR3710ZPBF PDF File ( Datasheet )
Infineon
IRFR3710ZPBF
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 15Milliohms; ID 56A; D-Pak (TO-252AA); -55deg
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Microchip USA | 362 | Visit Site | |||
| Sensible Micro | 51 | Visit Site | |||
| Win Source | 40,220 | Visit Site | |||
| Worldway Electronics | 9,912 | Visit Site | |||
| GreenTree Electronics | 100 | Visit Site | |||
| Esaler Electronic | 3,000 | 0.71 | Visit Site | ||
| Fly-Wing Technology | 248,898 | 0.91295 | Visit Site | ||
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| IRFR3710ZPBF Description |
| Power MOSFET, Transistor
Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Multiple Package Options Lead-Free
IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF
HEXFET® Power MOSFET
VDSS
100V
RDS(on)
18m
ID 42A
D D
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope
 Infineon |
| Automotive MOSFET
PD - 95513A
AUTOMOTIVE MOSFET
IRFR3710ZPbF IRFU3710ZPbF
HEXFET® Power MOSFET
D
Features
l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
VDSS = 100V
G S
RDS(on) = 18mΩ ID = 42A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional fea
 International Rectifier |
| Related Part Number |
IRFP251 | IRFH7187PbF IRFR430A | IRF626 IRFP340A | IRF740PBF |
| DataSheet.es | 2020 | Contacto |