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IRFR3505PBF PDF File ( Datasheet )

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IRFR3505PBF
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

PDF Datasheet
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Win Source1,350Visit Site
Worldway Electronics15,1963.19063.1304Visit Site
Chipsmall Limited150,0000.685470.456980.27419Visit Site
Anlinkda35,3210.3340.2990.288Visit Site
Fly-Wing Technology1,8470.83030.681150.66025Visit Site
Classic Components58Visit Site
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IRFR3505PBF Description
Power MOSFET, Transistor

Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an

International Rectifier
International Rectifier



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