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| IRFR224 Description |
| Power MOSFET, Transistor
$GYDQFHG 3RZHU 026)(7
IRFR224
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10 A (Max.) @ VDS = 250V Low RDS(ON): 0.742Ω (Typ.)
BVDSS = 250 V RDS(on) = 1.1Ω ID = 3.8 A
D-PAK I-PAK
2
11
3
2 3
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv, dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuou
Fairchild Semiconductor |
| Power MOSFET, Transistor
International Rectifier |
| Related Part Number |
IRFI610A | IRF7105PBF IRF452 | IRFB4127PBF IRF351 | IRFBC40R |
| DataSheet.es | 2020 | Contacto |