|
| IRFP453 Description |
| N-Channel MOSFET Transistor
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP453
FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 450V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.5Ω(Max) ·Fast Switching
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
450 ±20
V V
ID Dr
Inchange Semiconductor |
| N-CHANNEL POWER MOSFETS
Samsung semiconductor |
| Related Part Number |
IRF614S | IRF830FI IRFP251 | IRFH7187PbF IRFR430A | IRF626 |
| DataSheet.es | 2020 | Contacto |