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IRFP452R PDF File ( Datasheet )
Harris
IRFP452R
Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
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| IRFP452R Description |
| N-Channel MOSFET Transistor
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP452R
FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.5Ω(Max) ·Fast Switching
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
I
 Inchange Semiconductor |
| Related Part Number |
IRF6795MTRPbF | IRFR210A IRFIZ34NPBF | IRF641 IRFP442R | IRFU430A |
| DataSheet.es | 2020 | Contacto |