IRFP360 PDF File ( Datasheet )

Power MOSFET IRFP360, SiHFP360 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 400 VGS = 10 V 210 30 110 Single 0.20 TO-247 D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES Dynamic dV, dt Rated Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Third generat

MegaMOSTMFET N-Channel Enhancement Mode IRFP 360 VDSS = 400 V ID25 = 23 A RDS(on) = 0.20 Ω Preliminary data Symbol VDSS V DGR VGS VGSM ID25 ID100 IDM IAR EAR dv, dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1.0 MΩ Continuous Transient TC = 25°C TC = 100°C TC = 25°C, pulse width limited by TJM TC = 25°C IS ≤ IDM, di, dt T J ≤ 150°C, R G = 2 Ω TC = 25°C Mounting torque Max lead temperature for soldering