DataSheet.es    

IRFP242R PDF File ( Datasheet )

Rochester Electronics
IRFP242R
Power Field-Effect Transistor, 20A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Powered by Octopart



 



IRFP242R Description
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP242R FEATURES ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.22Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±20 V V ID

Inchange Semiconductor
Inchange Semiconductor




Related Part Number

IRF523  |  IRF627  

IRF620R  |  IRF637  

IRF6218L  |  IRF614A  



DataSheet.es    |   2020   |  Contacto