IRFP150N PDF File ( Datasheet )

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP150N Features ·Drain Current ID= 42A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.036Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS G

IRFP150N Data Sheet January 2002 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE Features Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V Simulation Models - Temperature Compensated PSPICE™ and SABER Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com Peak Current vs Pulse Width Curve DRAIN (TAB) UIS Rating Curve Ordering Information Symbol D PART NUMBER IRFP150N PACKAGE TO-247 BRAND IRFP150N G S Abso