IRFP048N PDF File ( Datasheet )

PD - 9.1409A IRFP048N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.016Ω G S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for

Lead-Free PD- 95422 IRFP048NPbF www.irf.com 1 06, 16, 04 IRFP048NPbF 2 www.irf.com IRFP048NPbF www.irf.com 3 IRFP048NPbF 4 www.irf.com IRFP048NPbF www.irf.com 5 IRFP048NPbF 6 www.irf.com IRFP048NPbF www.irf.com 7 IRFP048NPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicate