IRFM110A PDF File ( Datasheet )

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 Ω (Typ.) IRFM110A BVDSS = 100 V RDS(on) = 0.4 Ω ID = 1.5 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv, dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25 C ) C