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IRFL4105 PDF File ( Datasheet )

Infineon
IRFL4105TRPBF
Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.045 Ohm; Id 3.7A; SOT-223; Pd 1W; Vgs +/-20V

PDF Datasheet
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IRFL4105 Description
Power MOSFET, Transistor

PD- 91381A IRFL4105 HEXFET® Power MOSFET l l l l l l Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv, dt Rating Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.045Ω G ID = 3.7A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFET
International Rectifier
International Rectifier
Power MOSFET, Transistor

PD- 91381A IRFL4105 HEXFET® Power MOSFET l l l l l l Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv, dt Rating Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.045Ω G ID = 3.7A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFET
International Rectifier
International Rectifier



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