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IRFIZ34V PDF File ( Datasheet )

International Rectifier
IRFIZ34V
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
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IRFIZ34V Description
Power MOSFET(Vdss=60V/ Rds(on)=28mohm/ Id=20A)

PD - 94053 IRFIZ34V HEXFET® Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V RDS(on) = 28mΩ G S ID = 20A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed a

International Rectifier
International Rectifier
HEXFET Power MOSFET

PD - 94841 IRFIZ34VPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications l Lead-Free Description l HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 28mΩ G S ID = 20A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast sw

International Rectifier
International Rectifier




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