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IRFIZ24V PDF File ( Datasheet )

International Rectifier
IRFIZ24V
Power Field-Effect Transistor, 14A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
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IRFIZ24V Description
Power MOSFET(Vdss=60V/ Rds(on)=0.060ohm/ Id=14A)

PD - 94102 IRFIZ24V Advanced Process Technology Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l l HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 0.060Ω G S Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg

International Rectifier
International Rectifier




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