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| IRFI710A Description |
| Power MOSFET, Transistor
$GYDQFHG 3RZHU 026)(7
IRFW, I710A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10 A (Max.) @ VDS = 400V Low RDS(ON): 2.815Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv, dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Sou
Fairchild Semiconductor |
| Related Part Number |
IRF7401PBF | IRF721 IRFP244 | IRFH6200TRPBF IRFP150R | IRF8910PBF-1 |
| DataSheet.es | 2020 | Contacto |